mbrf1090ct thru MBRF10100CT vishay semiconductors formerly general semiconductor document number 88681 www.vishay.com 23-apr-03 1 new product dual high-voltage schottky rectifiers reverse voltage 90 to 100v forward current 10a features ?plastic package has underwriters laboratory flammability classification 94v-0 ?dual rectifier construction, positive center tap ?metal silicon junction, majority carrier conduction ?low power loss, high efficiency ?guardring for overvoltage protection ?for use in low voltage, high frequency inverters, free wheeling, and polarity protection applications mechanical data case: jedec ito-220ab molded plastic body terminals: plated leads, solderable per mil-std-750, method 2026 high temperature soldering guaranteed: 250?/10 seconds, 0.25" (6.35mm) from case polarity: as marked mounting position: any mounting torque: 10 in-lbs maximum weight: 0.08 oz., 2.24 g dimensions in inches and (millimeters) 1 3 pin 2 0.060 (1.52) 0.405 (10.27) 0.383 (9.72) 0.191 (4.85) 0.171 (4.35) 0.600 (15.5) 0.580 (14.5) 0.560 (14.22) 0.530 (13.46) 0.037 (0.94) 0.027 (0.69) 0.140 (3.56) 0.130 (3.30) 0.350 (8.89) 0.330 (8.38) 0.188 (4.77) 0.172 (4.36) 0.110 (2.80) 0.100 (2.54) 0.131 (3.39) 0.122 (3.08) 0.110 (2.80) 0.100 (2.54) 0.022 (0.55) 0.014 (0.36) dia. dia. 0.676 (17.2) 0.646 (16.4) 0.205 (5.20) 0.195 (4.95) 0.105 (2.67) 0.095 (2.41) pin 2 pin 1 pin 3 ito-220ab maximum ratings and thermal characteristics (t c = 25 c unless otherwise noted) parameter symbol mbrf1090ct MBRF10100CT unit maximum repetitive peak reverse voltage v rrm 90 100 v working peak reverse voltage v rwm 90 100 v maximum dc blocking voltage v dc 90 100 v maximum average forward rectified current total device 10 at t c = 105 c per leg i f(av) 5 a peak forward surge current 8.3ms single half sine-wave i fsm 120 a superimposed on rated load (jedec method) per leg peak repetitive reverse current per leg at t p = 2 s, 1kh z i rrm 0.5 a voltage rate of change (rated v r ) dv/dt 10,000 v/ s typical thermal resistance per leg r jc 6.8 c/w operating junction and storage temperature range t j , t stg 65 to +150 c rms isolation voltage (mbrf type only) from terminals 4500 (1) to heatsink with t = 1 second, rh 30% v isol 3500 (2) v 1500 (3) electrical characteristics (t c = 25 c unless otherwise noted) maximum instantaneous at i f = 5.0a, t c = 125 c v f 0.75 v forward voltage per leg (4) at i f = 5.0a, t c = 25 c 0.85 maximum reverse current per leg t j = 25 c 100 a at working peak reverse voltage (4) t j = 100 c i r 6.0 ma notes: (1) clip mounting (on case), where lead does not overlap heatsink with 0.110 offset (2) clip mounting (on case), where leads do overlap heatsink (3) screw mounting with 4-40 screw, where washer diameter is 4.9 mm (0.19 ) (4) pulse test: 300 s pulse width, 1% duty cycle
mbrf1090ct thru MBRF10100CT vishay semiconductors formerly general semiconductor www.vishay.com document number 88681 2 23-apr-03 ratings and characteristic curves (t a = 25 c unless otherwise noted) 0 0.2 1.0 1.2 1.4 1.6 0.4 100 10 0.1 0.01 1.0 0 2 4 6 10 0 50 100 150 8 0 20 60 40 100 80 120 110 100 0.6 0.8 0.01 0.001 0.1 1 10 100 0.0001 0.01 110 10 100 0.1 0.1 1 fig. 3 ?typical instantaneous forward characteristics per leg t j = 175 c i r -- instantaneous reverse current (ma) junction capacitance (pf) 1 10 100 10 100 1000 0.1 1 fig. 6 ?typical junction capacitance per leg reverse voltage (v) 0 20 100 40 60 80 fig. 1 ?forward current derating curve fig. 2 ?maximum non-repetitive peak forward surge current per leg fig. 4 ?typical reverse characteristics per leg fig. 5 ?typical transient thermal impedance per leg t -- pulse duration (sec.) instantaneous forward voltage (v) case temperature ( c) number of cycles at 60 h z percent of rated peak reverse voltage (%) average forward current (a) peak forward surge current (a) i f -- instantaneous forward current (a) transient thermal impedance ( c/w) t j = 25 c 100 c 150 c resistive or inductive load t j = t j max. 8.3ms single half sine-wave (jedec method) t j = 150 c 125 c 100 c 25 c
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